ar c hive inf o rmati o n archive information 1 mrf20030r motorola rf device data the rf subCmicron bipolar line designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 mhz. the high gain and broadband performance of this device makes it ideal for largeCsignal , commonCemitter class ab amplifier applications. suitable for frequency modulated, amplitude modulated and multiCcarrier base station rf power amplifiers. ? specified 26 volts, 2.0 ghz, class ab, twoCtones characteristics output power 30 watts (pep) power gain 9.8 db efficiency 34% intermodulation distortion C28 dbc ? typical 26 volts, 1.88 ghz, class ab, cw characteristics output power 30 watts power gain 11 db efficiency 40% intermodulation distortion C30 dbc ? excellent thermal stability ? capable of handling 3:1 vswr @ 26 vdc, 2000 mhz, 30 watts (pep) output power ? characterized with series equivalent largeCsignal impedance parameters ? sCparameter characterization at high bias levels ? designed for fm, tdma, cdma, and multiCcarrier applications note: not suitable for class a operation. maximum ratings rating symbol value unit collectorCemitter voltage v ceo 25 vdc collectorCemitter voltage v ces 60 vdc collectorCbase voltage v cbo 60 vdc collectorCemitter voltage (r be = 100 ? ) v cer 30 vdc emitterCbase voltage v eb C3 vdc collector current C continuous i c 4 adc total device dissipation @ t c = 25 c derate above 25 c p d 125 0.71 watts w/ c storage temperature range t stg C 65 to +150 c operating junction temperature t j 200 c thermal characteristics rating symbol max unit thermal resistance, junction to case (1) r jc 1.4 c/w (1) thermal resistance is determined under specified rf operating condition. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorCemitter breakdown voltage (i c = 25 madc, i b = 0) v (br)ceo 25 28 vdc collectorCemitter breakdown voltage (i c = 25 madc, v be = 0) v (br)ces 60 70 vdc collectorCbase breakdown voltage (i c = 25 madc, i e = 0) v (br)cbo 60 70 vdc order this document by mrf20030r/d semiconductor technical data 30 w, 2.0 ghz npn silicon broadband rf power transistor case 395cC01, style 1 ? motorola, inc. 1999 (replaces mrf20030/d) rev 1
ar c hive inf o rmati o n archive information mrf20030r 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics emitterCbase breakdown voltage (i b = 5 madc, i c = 0) v (br)ebo 3 3.8 vdc collector cutoff current (v ce = 30 vdc, v be = 0) i ces 10 madc on characteristics dc current gain (v ce = 5 vdc, i ce = 1 adc) h fe 20 40 80 dynamic characteristics output capacitance (v cb = 26 vdc, i e = 0, f = 1.0 mhz) (1) c ob 28 pf functional tests (in motorola test fixture) commonCemitter amplifier power gain (v cc = 26 vdc, p out = 30 watts, i cq = 120 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) g pe 9.8 11 db collector efficiency (v cc = 26 vdc, p out = 30 watts (pep), i cq = 120 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) 34 38 % intermodulation distortion (v cc = 26 vdc, p out = 30 watts (pep), i cq = 120 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) imd C30 C28 dbc input return loss (v cc = 26 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) irl 10 17 db load mismatch (v cc = 26 vdc, p out = 30 watts (pep), i cq = 120 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz, load vswr = 3:1, all phase angles at frequency of test) no degradation in output power commonCemitter amplifier power gain (v cc = 26 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 1930.0 mhz, f 2 = 1930.1 mhz) g pe 11 db collector efficiency (v cc = 26 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 1930.0 mhz, f 2 = 1930.1 mhz) 34 % intermodulation distortion (v cc = 26 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 1930.0 mhz, f 2 = 1930.1 mhz) imd C32 dbc input return loss (v cc = 26 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 1930.0 mhz, f 2 = 1930.1 mhz) irl 14 db guaranteed but not tested (in motorola test fixture) commonCemitter amplifier power gain (v cc = 26 vdc, p out = 30 watts, i cq = 125 ma, f = 1880 mhz) g pe 10.5 db collector efficiency (v cc = 26 vdc, p out = 30 watts , i cq = 125 ma, f = 1880 mhz) 40 % input return loss (v cc = 26 vdc, p out = 30 watts , i cq = 125 ma, f = 1880 mhz) irl 14 db output mismatch stress (v cc = 25 vdc, p out = 30 watts, i cq = 125 ma, f = 1880 mhz, vswr = 3:1, all phase angles at frequency of test) typically no degradation in output power (1) for information only. this part is collector matched.
ar c hive inf o rmati o n archive information 3 mrf20030r motorola rf device data figure 1. class ab test fixture electrical schematic b1, b2 ferrite bead, p/n 5659065/3b, ferroxcube c1, c13 0.1 f, chip capacitor, kermet c2 100 f, 50 v, electrolytic capacitor, mallory c3, c5, c12 0.6C4 pf, variable capacitor, johanson, gigatrim c4, c11 10 pf, b case chip capacitor, atc c6, c8 24 pf, b case chip capacitor, atc c7, c9 75 pf, b case chip capacitor, atc c10 0.4C2.5 pf, variable capacitor, johanson, gigatrim c14 470 f, 63 v, electrolytic capacitor, mallory d1 diode, motorola (mur3160t3) l1, l4 12 turns, 22 awg, idia. 0.195 l2, l3 0.750 20 awg n1, n2 type n flange mount rf connector ma/com 3052C1648C10 r1, r2 130 ? , 1/8 w chip resistor, rohm r3, r4 100 ? , 1/8 w chip resistor, rohm r5, r8 10 ? , 1/2 w resistor r6, r7 10 ? , 1/8 w chip resistor, rohm (10j) q1 transistor, pnp motorola (bd136) q2 transistor, npn motorola (mjd47) board 30 mil glass teflon ? , arlon gxC0300C55C22, r = 2.55
ar c hive inf o rmati o n archive information mrf20030r 4 motorola rf device data typical characteristics figure 2. output power & power gain versus input power figure 3. output power versus frequency figure 4. intermodulation distortion versus output power figure 5. power gain and intermodulation distortion versus supply voltage figure 6. intermodulation distortion versus output power figure 7. power gain versus output power
ar c hive inf o rmati o n archive information 5 mrf20030r motorola rf device data figure 8. performance in broadband circuit figure 9. mtbf factor versus junction temperature
ar c hive inf o rmati o n archive information mrf20030r 6 motorola rf device data figure 10. series equivalent input and output impedence f mhz z in (1) ? z ol * ? 1800 1850 1900 1950 4.5 + j7.0 4.5 + j4.6 4.5 + j6.0 3.7 + j2.4 4.7 + j2.4 4.4 + j1.6 3.4 + j1.2 3.3 + j1.6 z in (1) = conjugate of fixture base impedance. z ol * = conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. ? 2000 3.5 + j1.5 3.5 + j2.0
ar c hive inf o rmati o n archive information 7 mrf20030r motorola rf device data table 1. common emitter sCparameters at v ce = 24 vdc, i c = 1.8 adc f s 11 s 21 s 12 s 22 ghz |s 11 | |s 21 | |s 12 | |s 22 | 1.5 .964 158 .65 74 .046 60 .859 161 1.55 .960 156 .74 68 .047 56 .841 161 1.6 .952 155 .87 60 .049 53 .815 160 1.65 .933 153 1.05 50 .048 46 .787 161 1.7 .892 149 1.32 35 .047 40 .744 163 1.75 .804 149 1.64 13 .040 29 .719 168 1.8 .727 157 1.78 C18 .026 21 .778 175 1.85 .787 163 1.50 C50 .015 54 .883 174 1.9 .873 163 1.14 C73 .020 81 .937 171 1.95 .921 160 .84 C89 .026 88 .949 168 2 .941 157 .62 C102 .031 93 .950 165 2.05 .943 155 .48 C109 .036 93 .946 164 2.1 .940 153 .38 C118 .040 92 .942 163 2.15 .928 151 .30 C127 .042 97 .939 162 2.2 .917 150 .24 C133 .049 99 .935 161 2.25 .907 150 .20 C140 .056 101 .933 160 2.3 .888 148 .17 C150 .066 100 .926 159 2.35 .861 148 .14 C159 .077 98 .916 157 2.4 .853 149 .11 C167 .087 92 .909 157 2.45 .860 146 .10 C176 .095 89 .900 155 2.5 .880 146 .10 156 .119 84 .880 155
mrf20030r 8 motorola rf device data package dimensions case 395cC01 issue a u d k n j h e c
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